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Internal feedback provides wide bandwidth, low phase distortion, and excellent gain stability. Symbol 1n4001 1n4002 1n4003 1n4004 1n4005 1n4006 1n4007. Triple diffused silicon npn transistor designed for low frequency power amplifier maximum ratings characteristic symbol value unit collector base voltage vcbo 100 v collector emitter voltage vceo 80 v emitter base voltage vebo 5 v collector current dc ic 4 a collector current peak ic 8 a. Datasheet contains the design specifications for product development. Use the meter only as specified in this datasheet or the protection provided by the meter might be impaired. Eu declaration of conformity in accordance with en isoiec 17050. The cd4001 quad gate is a monolithic complementary mos cmos integrated circuit constructed with n and pchannel enhancement mode transistors.
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